Single-Step Direct Growth of Graphene on Cu Ink toward Flexible Hybrid Electronic Applications by Plasma-Enhanced Chemical Vapor Deposition

Highly customized and free-formed products in flexible hybrid electronics (FHE) require direct pattern creation such as inkjet printing (IJP) to accelerate product development. In this work, we demonstrate the growth of graphene on Cu ink deposited polyimide (PI) by means plasma-enhanced chemical vapor deposition (PECVD), which provides simultaneous reduction, sintering, passivation further reduces its resistivity. We investigate PECVD conditions for optimizing quality find that defect characteristics are sensitive H2/CH4 ratio at higher total gas pressure during growth. The morphology after process dependence may be attributed difference corresponding electron temperature. Therefore, study paves a new pathway toward efficient high-quality applications Internet Things (IoT).